The DC sputtering SiC target silicon carbide Ion Beam Sputtering

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price: Negotiable
minimum:
Total supply:
Delivery term: The date of payment from buyers deliver within days
seat: Beijing
Validity to: Long-term effective
Last update: 2017-12-17 03:54
Browse the number: 35
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Product details
SiC target 99.5%

Physical properties


Color


Black

Density


3.22g/ml

Melting point


2730

Technical indicators


purity


99.5%

Relative density


>99%

Cut surface flatness


3.2Ra

Tolerance


±0.1mm

grain size


uniform

Material


SiC

Brand


MAT-CN

Origin


Nanchang Jiangxi

Specifications


Size 01: diameter <360mm thickness> 1 mm (wafer / round table / rod)

Size 02: length <300mm width <300mm thickness> 1mm rectangular / sheet / step-like (splicing)

Size 03: outer diameter <360mm inner diameter> 1mm wall degree> 1 mm length> 1 mm (pipe / ring / rotatable targets)

Size 04 :: be customized according to user needs, sample processing, to map processing

Minimum order quantity


1, large concessions

Supply capacity


the same batch, the same material, continuous and reliable supply; 100 kg / month min

Delivery time


a single sheet of material 1 week delivery, bulk material 20 days -30 days delivery(working days)

Production process

vacuum levitation melting, casting into ingots, thermo-mechanical treatment and precision machining
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